m(b,i)3035s & m(b,i)3045s vishay general semiconductor document number: 88952 revision: 12-mar-09 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 1 new product schottky barrier rectifier features ? guardring for overvoltage protection ? lower power losses, high efficiency ? low forward voltage drop ? high forward surge capability ? high frequency operation ? meets msl level 1, per j-std-020, lf maximum peak of 245 c (for to-263ab package) ? solder bath temperature 275 c maximum, 10 s, per jesd22-b106 (for to-220ab and to-262aa package) ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec typical applications for use in low voltage, high frequency rectifier of switching mode power supplies, freewheeling diodes, dc-to-dc converters or polarity protection applications. mechanical data case: to-220ab, to-263ab and to-262aa molding compound meets ul 94 v-0 flammability rating base p/n-e3 - rohs comp liant, commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd22-b102 e3 suffix meets jesd 201 class 1a whisker test polarity: as marked mounting torque: 10 in-lbs maximum primary characteristics i f(av) 30 a v rrm 35 v, 45 v i fsm 200 a v f at i f = 30 a 0.61 v t j max. 150 c 1 k 2 3 to-263ab nc a k to-262aa to-220ab 1 2 3 m30xxs pin 1 pin 2 case pin 3 mi30xxs mb30xxs heatsink nc a k k pin 1 pin 3 pin 2 maximum ratings (t a = 25 c unless otherwise noted) parameter symbol m(b,i)3035s m(b,i)3045s unit maximum repetitive peak reverse voltage v rrm 35 45 v maximum average forward rectified current (fig. 1) i f(av) 30 a peak forward surge current 10 ms single half sine-wave superimposed on rated load i fsm 200 a peak repetitive reverse current per leg at t p = 2 s, 1 khz i rrm 2.0 a voltage rate of change (rated v r ) dv/dt 10 000 v/s operating junction temperature range t j - 65 to + 150 c storage temperature range t stg - 65 to + 175 c
new product m(b,i)3035s & m(b,i)3045s vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com document number: 88952 revision: 12-mar-09 2 notes: (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width 40 ms ratings and characteristics curves (t a = 25 c unless otherwise noted) electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol typ. max. unit maximum instantaneous forward voltage (1) i f = 15 a i f = 30 a t j = 25 c v f 0.54 0.65 - 0.70 v i f = 15 a i f = 30 a t j = 125 c 0.46 0.61 - 0.66 maximum instantaneous reverse current at rated v r (2) t j = 25 c t j = 125 c i r 40 26 200 55 a ma typical junction capacitance 4.0 v, 1 mhz c j 980 pf thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol m30xxs mb30xxs mi30xxs unit typical thermal resistance r jc 2.0 c/w ordering information (example) package preferred p/n unit weight (g) package code base quantity delivery mode to-220ab m3045s-e3/4w 1.878 4w 50/tube tube to-263ab mb3045s-e3/4w 1.37 4w 50/tube tube to-263ab mb3045s-e3/8w 1.37 8w 800/reel tape and reel to-262aa mi3045s-e3/4w 1.454 4w 50/tube tube figure 1. forward current derating curve case temperat u re (c) 35 15 0 075150 a v erage for w ard c u rrent (a) 25 25 100 5 50 125 10 m30xxs m(b,i)30xxs 30 20 figure 2. maximum non-repetitive peak forward surge current nu m b er of cycles at 60 hz 300 150 0 1100 peak for w ard s u rge c u rrent (a) 200 10 50 100 250 t j = t j max. 8 .3 ms single half sine- w a v e
new product m(b,i)3035s & m(b,i)3045s vishay general semiconductor document number: 88952 revision: 12-mar-09 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 3 figure 3. typical instantaneous forward characteristics figure 4. typical reve rse characteristics figure 5. typical junction capacitance instantaneo u s for w ard v oltage ( v ) 100 0.1 0.01 00.9 instantaneo u s for w ard c u rrent (a) 1 0.1 10 0. 8 0.7 0.6 0.5 0.4 0.3 0.2 p u lse w idth = 300 s 1 % d u ty cycle t j = 150 c t j = 125 c t j = 25 c percent of rated peak re v erse v oltage ( % ) 1000 0.1 0.001 10 100 instantaneo u s re v erse c u rrent (ma) 1 20 10 90 8 0 70 60 50 40 30 t j = 150 c t j = 125 c t j = 25 c 0.01 100 re v erse v oltage ( v ) 10 000 100 0.1 100 j u nction capacitance (pf) 110 1000 t j = 25 c f = 1.0 mhz v sig = 50 m v p-p figure 6. typical transient thermal impedance figure 7. typical transient thermal impedance t - p u lse d u ration (s) 10 0.1 0.01 100 transient thermal impedance (c/ w ) 110 1 0.1 j u nction to case m(i)30xxs t - p u lse d u ration (s) 10 0.1 0.01 100 transient thermal impedance (c/ w ) 110 1 0.1 j u nction to case mb30xxs
new product m(b,i)3035s & m(b,i)3045s vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com document number: 88952 revision: 12-mar-09 4 package outline dimensions in inches (millimeters) to-220ab 0.113 (2. 8 7) 0.103 (2.62) 0.370 (9.40) 0.360 (9.14) 0.415 (10.54) max. 0.635 (16.13) 0.625 (15. 8 7) pi n 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) 0.105 (2.67) 0.095 (2.41) 0.104 (2.65) 0.096 (2.45) 0.205 (5.20) 0.195 (4.95) 0.035 (0.90) 0.02 8 (0.70) 0.154 (3.91) 0.14 8 (3.74) 1 3 2 0.1 8 5 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.145 (3.6 8 ) 0.135 (3.43) 0.350 ( 8 . 8 9) 0.330 ( 8 .3 8 ) 1.14 8 (29.16) 1.11 8 (2 8 .40) 0.560 (14.22) 0.530 (13.46) 0.022 (0.56) 0.014 (0.36) 0.110 (2.79) 0.100 (2.54) 0.603 (15.32) 0.573 (14.55) 0.035 (0.90) 0.02 8 (0.70) 0.055 (1.40) 0.047 (1.19) 0.510 (12.95) 0.470 (11.94) k pi n 0.104 (2.65) 0.096 (2.45) 0.205 (5.20) 0.195 (4.95) 0.057 (1.45) 0.045 (1.14) 30 (typ) (ref) 0.411 (10.45) max. to-262aa 123 0.250 (6.35) min. 0.160 (4.06) 0.140 (3.56) 0.950 (24.13) 0.920 (23.37) 0.560 (14.22) 0.530 (13.46) 0.022 (0.56) 0.014 (0.35) 0.350 ( 8 . 8 9) 0.330 ( 8 .3 8 ) 0.110 (2.79) 0.100 (2.54) 0.401 (10.19) 0.3 8 1 (9.6 8 ) 0.1 8 5 (4.70) 0.175 (4.44) 0.055 (1.40) 0.045 (1.14) to-263ab 0.670 (17.02) 0.591 (15.00) 0.105 (2.67) 0.095 (2.41) 0.0 8 (2.032) mi n . 0.15 (3. 8 1) mi n . 0.33 ( 8 .3 8 ) mi n . 0.42 (10.66) mi n . n ca k k 0.140 (3.56) 0.110 (2.79) 0.021 (0.53) 0.014 (0.36) 0.110 (2.79) 0.090 (2.29) 0 to 0.01 (0 to 0.254) 0.055 (1.40) 0.047 (1.19) 0.055 (1.40) 0.045 (1.14) 0.190 (4. 8 3) 0.160 (4.06) 0.205 (5.20) 0.195 (4.95) 0.624 (15. 8 5) 0.591 (15.00) 0.037 (0.940) 0.027 (0.6 8 6) 0.105 (2.67) 0.095 (2.41) 0.360 (9.14) 0.320 ( 8 .13) 0.411 (10.45) 0.3 8 0 (9.65) 0.245 (6.22) mi n . mountin g pad layout
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